參數(shù)資料
型號(hào)： AMIS-30663
元件分類(lèi)： CAN
英文描述： High Speed CAN Transceiver
中文描述： 高速CAN收發(fā)器
文件頁(yè)數(shù)： 5/12頁(yè)
文件大小： 222K
代理商： AMIS-30663
5
AMI Semiconductor - Rev. 1.4, Oct. 04
www.amis.com
AMIS-30663
High Speed CAN Transceiver
Data Sheet
8.0 Electrical Characteristics
8.1 Definitions
All voltages are referenced to GND (pin 2). Positive currents flow into the IC. Sinking current means that the current is flowing into the pin. Sourcing
current means that the current is flowing out of the pin.
8.2 Absolute Maximum Ratings
Stresses above those listed in Table 4 may cause permanent device failure. Exposure to absolute maximum ratings for extended periods may effect device
reliability.
Table 4: Absolute Maximum Ratings
Symbol
V
CC
V
33
V
CANH
V
CANL
V
TxD
V
RxD
V
REF
V
tran(CANH)
V
tran(CANL)
V
tran(VREF)
Parameter
Supply voltage
I/O interface voltage
DC voltage at pin CANH
DC voltage at pin CANL
DC voltage at pin TxD
DC voltage at pin RxD
DC voltage at pin VREF
Transient voltage at pin CANH
Transient voltage at pin CANL
Transient voltage at pin VREF
Electrostatic discharge voltage
at CANH and CANL pin
Electrostatic discharge voltage
at all other pins
Static latch-up at all pins
Storage temperature
Ambient temperature
Maximum junction temperature
Conditions
Min.
-0.3
-0.3
-45
-45
-0.3
-0.3
-0.3
-150
-150
-150
-8
-500
-4
-250
Max.
+7
+7
+45
+45
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
+150
+150
+150
+8
+500
+4
+250
100
+155
+125
+150
Unit
V
V
V
V
V
V
V
V
V
V
kV
V
kV
V
mA
°C
°C
°C
0 < V
CC
< 5.25V; no time limit
0 < V
CC
< 5.25V; no time limit
Note 1
Note 1
Note 1
Note 2
Note 5
Note 3
Note 5
Note 4
V
esd(CANL/CANH
)
V
esd
Latch-up
T
stg
T
amb
T
junc
-55
-40
-40
Notes
1) Applied transient waveforms in accordance with "ISO 7637 part 3", test pulses 1, 2, 3a, and 3b (see Figure 4).
2) Standardized human body model system ESD pulses in accordance to IEC 1000.4.2
3) Standardized human body model ESD pulses in accordance to MIL883 method 3015. Supply pin 8 is ±4kV
4) Static latch-up immunity: static latch-up protection level when tested according to EIA/JESD78.
5) Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3-1993.
8.3 Thermal Characteristics
Table 5: Thermal Characteristics
Symbol
R
th(vj-a)
R
th(vj-s)
Parameter
Thermal resistance from junction to ambient in SO8 package
Thermal resistance from junction to substrate of bare die
Conditions
In free air
In free air
Value
145
45
Unit
K/W
K/W
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