參數(shù)資料
型號: AMMC-5033
元件分類: 放大器
英文描述: 17700 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: 0.108 X 0.0516 INCH, 0.004 INCH HEIGHT, DIE
文件頁數(shù): 2/9頁
文件大?。?/td> 325K
代理商: AMMC-5033
2
AMMC-5033 DC Specifications/Physical Properties[1]
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
Id1
First Stage Drain Supply Current
mA
280
320
(Vd1 = 3.5 V, Vg1 = Open, Vgg set for Id2 Typical)
Id2
Second Stage Drain Supply Current
V
500
(Vd2 = 5 V, Vg1 = Open, Vgg set for Id2 Typical)
Vgg
Gate Supply Operating Voltage
V
-0.75
-0.6
-0.4
(Id1(Q) + Id2(Q) = 780 (mA))
DETBias
Detector Bias Voltage (Optional)
V
Vd2
θ
c1(ch-bs)
First Stage Thermal Resistance[2]
°C/W
31
(Backside Temperature, Tb = 25
°C)
θ
c2(ch-bs)
Second Stage Thermal Resistance[2, 3]
°C/W
19
(Backside Temperature, Tb = 25
°C)
Notes:
1. Backside temperature Tb = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (
θch-b) = 42°C/W at Tchannel (Tc) = 150°C as measured using infrared microscopy. Thermal
Resistance at backside temperature (Tb) = 25
°C calculated from measured data.
3. Channel-to-backside Thermal Resistance (
θch-b) = 24°C/W at Tchannel (Tc) = 150°C as measured using infrared microscopy. Thermal
Resistance at backside temperature (Tb) = 25
°C calculated from measured data.
AMMC-5033 RF Specifications[4, 5]
Tb = 25
°C,Vd1 = 3.5 V,Vd2 = 5 V, Id1(Q) = 280 mA, Id2(Q) = 500 mA, Zo = 50
Lower Band
Mid Band
Upper Band
Specifications
Parameters and
(17.7 - 21 GHz)
(21 - 26.5 GHz)
(26.5 - 32 GHz)
Symbol
Test Condition
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Gain
Small-Signal Gain[5]
dB
20
22
17.5
20
16.5
18.5
P-1dB
Output Power at 1dB Gain
dB
23.5
25
25.5
27
25
26.5
Compression[6]
P-3dB
Output Power at 3dB Gain
dB
27
28
27
Compression[6]
OIP3
Output Third Order Intercept
dBm
27
29
29.5
32
29
32
Point;[6];
f = 2 MHz;
Pin = +2 dBm
RLin
Input Return Loss[5]
dB
11.5
13.5
11
13
11
13
RLout
Output Return Loss[5]
dB
14
20
14
19
15
22
Isolation
Min. Reverse Isolation
dB
47
48
46
Notes:
4. Data measured in wafer form Tb = 25
°C.
5. 100% on-wafer RF test is done at frequency = 17.7, 21, 26.5 and 32 GHz.
6. 100% on-wafer test frequency = 17.7, 26.5 and 32 GHz.
相關PDF資料
PDF描述
AMMC-6420-W50 6000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AMMC-6420-W10 6000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AMMC-6430-W50 25000 MHz - 33000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AMMC-6430-W10 25000 MHz - 33000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AMMC-6431-W10 25000 MHz - 33000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
相關代理商/技術(shù)參數(shù)
參數(shù)描述
AMMC-5033-W10 功能描述:射頻放大器 Amp GaAs MMIC RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
AMMC-5033-W50 功能描述:射頻放大器 Amp GaAs MMIC RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
AMMC-5040 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:20-45 GHz GaAs Amplifier
AMMC-5040-W10 功能描述:射頻放大器 20 - 45 GHz 25 dB RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
AMMC-5040-W50 功能描述:射頻放大器 20 - 45 GHz 25 dB RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel