AMP04
REV. B
–5–
Parameter
Symbol
Conditions
Limit
Unit
G = 1000
80
dB min
Power Supply Rejection
PSRR
4.0 V
≤ VS ≤ 12 V
G = 1
85
dB min
G = 10
95
dB min
G = 100
95
dB min
G = 1000
95
dB min
GAIN (G = 100 K/RGAIN)
Gain Equation Accuracy
G = 1 to 100
0.75
% max
OUTPUT
Output Voltage Swing High
VOH
RL = 2 k
4.0
V min
Output Voltage Swing Low
VOL
RL = 2 k
2.5
mV max
POWER SUPPLY
Supply Current
ISY
VS =
±15
900
A max
700
A max
NOTE
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±18 V
Common-Mode Input Voltage
2
. . . . . . . . . . . . . . . . . . .
±18 V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . 36 V
Output Short-Circuit Duration to GND . . . . . . . . . . Indefinite
Storage Temperature Range
Z Package . . . . . . . . . . . . . . . . . . . . . . . . . . –65
°C to +175°C
P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65
°C to +150°C
Operating Temperature Range
AMP04A . . . . . . . . . . . . . . . . . . . . . . . . . . –55
°C to +125°C
AMP04E, F . . . . . . . . . . . . . . . . . . . . . . . . . –40
°C to +85°C
Junction Temperature Range
Z Package . . . . . . . . . . . . . . . . . . . . . . . . . . –65
°C to +175°C
P, S Package . . . . . . . . . . . . . . . . . . . . . . . . –65
°C to +150°C
Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300
°C
Package Type
JA
3
JC
Unit
8-Lead Cerdip (Z)
148
16
°C/W
8-Lead Plastic DIP (P)
103
43
°C/W
8-Lead SOIC (S)
158
43
°C/W
NOTES
1Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
2For supply voltages less than
± 18 V, the absolute maximum input voltage is
equal to the supply voltage.
3
θ
JA is specified for the worst case conditions, i.e.,
θ
JA is specified for device in
socket for cerdip, P-DIP, and LCC packages;
θ
JA is specified for device
soldered in circuit board for SOIC package.
ORDERING GUIDE
Temperature
VOS @ 5 V
Package
Model
Range
TA = 25 C
Description
Option
AMP04EP
XIND
150
V
Plastic DIP
N-8
AMP04ES
XIND
150
V
SOIC
SO-8
AMP04ES-REEL7
XIND
150
V
SOIC
SO-8
AMP04FP
XIND
300
V
Plastic DIP
N-8
AMP04FS
XIND
300
V
SOIC
SO-8
AMP04FS-REEL
XIND
150
V
SOIC
SO-8
AMP04FS-REEL7
XIND
150
V
SOIC
SO-8
AMP04GBC
25
°C
300
V
DICE CHARACTERISTICS
RGAIN
1
RGAIN
8
7 V+
6 VOUT
5 REF
–IN 2
+IN 3
V– 4
AMP04 Die Size 0.075
× 0.99 inch, 7,425 sq. mils.
Substrate (Die Backside) Is Connected to V+.
Transistor Count, 81.