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參數(shù)資料
| 型號： | AN8771NFH |
| 廠商： | PANASONIC CORP |
| 元件分類： | 消費(fèi)家電 |
| 英文描述： | Pre-amplifier IC for MD |
| 中文描述： | SPECIALTY CONSUMER CIRCUIT, PQFP64 |
| 封裝： | 10 X 10 MM, PLASTIC, QFP-64 |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 147K |
| 代理商： | AN8771NFH |
AN8771NFH
6
SDD00018CEB
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
ADIP frequency characteristics 1
G
ADf1
V
54
: 18 kHz sine wave (150 mV[p-p],
DC offset voltage
=
V
REF
80 mV)
V
19
=
V
REF
+
0.5 V
3
0
dB
ADIP frequency characteristics 2
G
ADf2
V
54
: 26 kHz sine wave (150 mV[p-p],
DC offset voltage
=
V
REF
80 mV)
V
19
=
V
REF
+
0.5 V
3
0
dB
RF amp. gain in group mode
(playback)
G
RFG
V
54
: 100 kHz sine wave (18 mV[p-p])
Group mode
18.8
20.8
22.8
dB
RF amp. gain in low reflection factor
(playback)
G
RFPL
V
54
: 100 kHz sine wave (120 mV[p-p])
Pit low reflection factor mode
1.5
3.5
5.5
dB
RF amp. gain in high reflection factor
(playback)
G
RFPH
V
54
: 100 kHz sine wave (300 mV[p-p])
Pit high reflection factor mode
8
6
4
dB
RF amp. frequency characteristics
in group mode
(playback)
G
RFG
V
54
: 4 MHz sine wave (18 mV[p-p])
Group mode
3
dB
RF amp. frequency characteristics
in low reflection factor
(playback)
G
RFPL
V
54
: 4 MHz sine wave (120 mV[p-p])
Pit low reflection factor mode
3
dB
RF amp. frequency characteristics
in high reflection factor
(playback)
G
RFPH
V
54
: 4 MHz sine wave (300 mV[p-p])
Pit high reflection factor mode
3
dB
EQ gain adjustment 1
G
EQ1
V
54
: 200 Hz, 720 kHz sine wave
(100 mV[p-p])
V
45
=
GND, V
44
=
V
REF
0.2 V
1.5
3.0
dB
EQ gain adjustment 2
G
EQ2
V
54
: 200 Hz, 720 kHz sine wave
(100 mV[p-p])
V
45
=
400 mV, V
44
=
V
REF
0.2 V
3.5
5.0
dB
AGC operation
V
OMRFV
V
46
: 500 kHz sine wave (200 mV[p-p])
420
520
620
mV
DSL pulse output duty
T
DSL
V
41
: 720 kHz sine wave (500 mV[p-p])
47
50
53
%
NRF detection operation
V
RFD
V
46
: 500 kHz sine wave (Amplitude sweep)
58
83
108
mV
NRF detection high-level voltage
V
RFDH
V
46
: 500 kHz sine wave (Amplitude sweep)
2.1
3.0
V
NRF detection low-level voltage
V
RFDL
V
H1TCR
V
46
: 500 kHz sine wave (Amplitude sweep)
V
7
: Sweep
+
0 to max.
+
150 mV
in DC refering to V
6
as reference
V
7
: Sweep
+
0 to max.
150 mV
in DC refering to V
6
as reference
V
7
=
V
6
+
100 mV
V
7
=
V
6
100 mV
Apply to the pin 24 DC voltage which
is 200 mV higher than that at open
0
0.4
V
TRCRS detection voltage 1
63
90
120
mV
TRCRS detection voltage 2
V
H2TCR
120
90
63
mV
TRCRS high-level voltage
V
TCRH
2.1
3.0
V
TRCRS low-level voltage
V
TCRL
I
CBDO1
0
0.4
V
ASBDO detection current 1
0.7
1.0
1.5
μ
A
ASBDO detection current 2
I
CBDO2
Apply to the pin 24 DC voltage which
is 1.1 V higher than that at open
17
26
39
μ
A
I
Electrical Characteristics at T
a
=
25
°
C (continued)
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