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參數(shù)資料
| 型號： | AN8771NFH |
| 廠商： | PANASONIC CORP |
| 元件分類： | 消費家電 |
| 英文描述： | Pre-amplifier IC for MD |
| 中文描述： | SPECIALTY CONSUMER CIRCUIT, PQFP64 |
| 封裝： | 10 X 10 MM, PLASTIC, QFP-64 |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 147K |
| 代理商： | AN8771NFH |
AN8771NFH
7
SDD00018CEB
I
Electrical Characteristics at T
a
=
25
°
C (continued)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
BDO high-level voltage
V
BDOH
V
BDOL
V
17
<
V
REF
+
50 mV
V
54
: Apply voltage so as to get
V
17
=
V
REF
+
200 mV
2.1
3.0
V
BDO low-level voltage
0
0.4
V
RFBDO detection current 1
I
CRFBDO1
V
26
: Apply voltage 100 mV higher
than that of at open
0.33
0.50
0.75
μ
A
RFBDO detection current 2
I
CRFBDO2
t
RFB
V
26
=
V
REF
+
0.3 V
V
46
: 500 kHz sine wave
(200 mV[p-p]
→
0 mV[p-p])
V
26
: Fix to DC voltage at which
200 mV[p-p] is inputted to V
46
6.7
10
15
μ
A
μ
s
RFBDO detection operation
15
30
60
3T component envelope
extracting gain
G
3TMON
V
41
: 720 kHz AM sine wave modulation
15.5
(500 mV[p-p])
AM sine wave: 5.3 kHz 20%
18.5
21.5
dB
OFTO
EFM detection gain
G
EFMOF
V
41
: 720 kHz AM sine wave modulation
(500 mV[p-p])
AM modulation: 5.3 kHz 20%
EFM detection output mode
6
3
0
dB
OFTIN detection level
V
OFTI
V
27
: Sweep V
REF
100 mV to
V
REF
+
100 mV in DC
V
27
=
V
REF
100 mV
V
27
=
V
REF
+
100 mV
V
5
=
V
REF
±
0.5 V
35
50
65
mV
OFTR high-level voltage
V
OFTH
2.1
3.0
V
OFTR low-level voltage
V
OFTL
0
0.4
V
TEMP amp. gain
G
TM
2
2
0
2
dB
REFO gain
G
REFO
V
3
: 20 kHz sine wave (0.5 V[p-p])
0
2
dB
I
Technical Data
1. Operation mode set by mode setting
<RF amp. gain> <IV amp.>
<OFTO output signal>
Setting pin
NREC
RFSWPG
RFSWHL
Operation mode
Pit high reflection factor mode
Pit mode
High-level
High-level
High-level
Pit low reflection factor mode
MO pit playback mode
High-level
High-level
Low-level
Group mode
MO group playback mode
High-level
Low-level
Low-level
Operation off mode
MO recording mode
Low-level
Setting pin
RFSWPG
Operation mode
EFM detection output mode
High-level
AS output mode
Low-level
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