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參數(shù)資料
| 型號： | AO4427 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | GREEN, SOIC-8 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 169K |
| 代理商： | AO4427 |
AO4427
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
VGS=-10V, VDS=-15V,
ID=-12.5A
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
10
20
30
0
1
2
3
4
5
-VDS (Volts)
Figure 1: On-Region Characteristics
-I
D
(A
)
VGS=-4V
-4.5V
-5V
-6V
-10V
0
5
10
15
20
25
1
1.5
2
2.5
3
3.5
4
4.5
5
-VGS(Volts)
Figure 2: Transfer Characteristics
-I
D
(A
)
8
9
10
11
12
0
5
10
15
20
25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
D
S
(O
N
)
(m
)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A
)
25°C
125°C
0.8
1
1.2
1.4
1.6
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
N
o
rm
a
li
z
e
d
O
n
-R
e
s
is
ta
n
c
e
VGS=-10V
ID=-10A
VGS=-20V
ID=-12.5A
0
10
20
30
40
50
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
D
S
(O
N
)
(m
)
25°C
125°C
VDS=-5V
VGS=-10V
VGS=-20V
ID=-12.5A
25°C
125°C
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4427_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AO4427L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| AO4429 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| AO4429L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| AO4430 | 功能描述:MOSFET N-CH 30V 18A 8-SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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