參數(shù)資料
型號: AO4468
廠商: ALPHA AND OMEGA SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 10500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: GREEN, SOIC-8
文件頁數(shù): 1/5頁
文件大?。?/td> 253K
代理商: AO4468
AO4468
30V N-Channel MOSFET
General Description
Product Summary
VDS
ID (at VGS=10V)
10.5A
RDS(ON) (at VGS=10V)
< 17m
RDS(ON) (at VGS = 4.5V)
< 23m
ESD Protected
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
RθJL
°C
Thermal Characteristics
W
3.1
2
TA=70°C
Junction and Storage Temperature Range
-55 to 150
Units
Parameter
Typ
Max
°C/W
RθJA
31
59
40
Maximum Junction-to-Ambient
A
V
±20
Gate-Source Voltage
mJ
Avalanche Current
C
18
A
19
A
The AO4468 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
30V
10.5
8.5
50
Drain-Source Voltage
30
TA=25°C
TA=70°C
Power Dissipation
B
PD
Avalanche energy L=0.1mH
C
Pulsed Drain Current
C
Continuous Drain
Current
TA=25°C
ID
Maximum Junction-to-Lead
°C/W
Maximum Junction-to-Ambient
A D
16
75
24
SOIC-8
Top View
Bottom View
D
S
G
D
S
Rev 6: December 2010
www.aosmd.com
Page 1 of 5
相關PDF資料
PDF描述
AO4496 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
AO4912 30 V, 0.026 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
AO4914 8000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
AOD452A 55 A, 25 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AOL1412 85 A, 30 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
AO4468_10 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET
AO4470 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor
AO4472 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor
AO4474 功能描述:MOSFET N-CH 30V 13.4A 8-SOIC RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
AO4476 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor