參數(shù)資料
型號(hào)： AOD405
廠商： Electronic Theatre Controls, Inc.
元件分類： MOSFETs
英文描述： P-Channel Enhancement Mode Field Effect Transistor
中文描述： 的P -溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管
文件頁數(shù)： 1/4頁
文件大?。?/td> 139K
代理商： AOD405
Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J
, T
STG
Symbol
Typ
16.7
40
1.9
Max
25
50
2.5
R
θ
JL
°C
V
V
±20
-18
-18
-40
30
2.5
1.6
A
-18
40
60
Gate-Source Voltage
Continuous Drain
Current
B,G
Drain-Source Voltage
-30
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
C
Maximum
Units
Parameter
T
A
=25°C
G
T
A
=100°C
G
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
I
D
P
DSM
A
mJ
Power Dissipation
B
T
C
=25°C
T
C
=100°C
T
A
=25°C
P
D
W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
C
Steady-State
Steady-State
°C/W
°C/W
W
T
A
=70°C
Junction and Storage Temperature Range
-55 to 175
Power Dissipation
A
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Units
°C/W
t
≤
10s
R
θ
JA
AOD405, AOD405L (Green Product)
P-Channel Enhancement Mode Field Effect Transistor
Rev 3: Sept 2004
Features
V
DS
(V) = -30V
I
D
= -18A
R
DS(ON)
< 32m
(V
GS
= -10V)
R
DS(ON)
< 60m
(V
GS
= -4.5V)
General Description
The AOD405 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications. AOD405L (Green
Product) is offered in a lead-free package.
G D S
TO-252
D-PAK
Top View
Drain Connected to
Tab
G
D
S
Alpha & Omega Semiconductor, Ltd.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AOD405L 制造商:未知廠家 制造商全稱:未知廠家 功能描述:P-Channel Enhancement Mode Field Effect Transistor
AOD406 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor
AOD406_08 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor
AOD406L 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor
AOD407 功能描述:MOSFET P-CH -60V -12A TO-252 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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