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參數(shù)資料
| 型號： | AON6428 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 43 A, 30 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 6 X 5 MM, GREEN, DFN-8 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 164K |
| 代理商： | AON6428 |
AON6428
Symbol
Min
Typ
Max
Units
BVDSS
30
V
VDS=30V, VGS=0V
1
TJ=55°C
5
IGSS
±100
nA
VGS(th)
Gate Threshold Voltage
1.2
1.7
2.2
V
ID(ON)
80
A
8.3
10
TJ=125°C
12.4
15
11.3
14.5
m
gFS
43
S
VSD
0.7
1
V
IS
35
A
Ciss
620
770
920
pF
Coss
170
240
310
pF
Crss
45
77
110
pF
Rg
0.4
0.8
1.6
Qg(10V)
11.8
14.8
17.8
nC
Qg(4.5V)
5.7
7.1
8.5
nC
Qgs
1.7
2.2
2.6
nC
Qgd
1.8
3.1
4.3
nC
tD(on)
5
ns
tr
3
ns
tD(off)
18
ns
tf
3
ns
trr
9
11
13
ns
Qrr
18
23
28
nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s
Turn-Off DelayTime
VGS=10V, VDS=15V, ID=20A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
VDS=5V, ID=20A
IF=20A, dI/dt=500A/s
SWITCHING PARAMETERS
Maximum Body-Diode Continuous Current
Input Capacitance
Body Diode Reverse Recovery Time
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Forward Transconductance
Diode Forward Voltage
VGS=10V, VDS=15V, RL=0.75,
RGEN=3
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
Reverse Transfer Capacitance
VGS=0V, VDS=15V, f=1MHz
IS=1A,VGS=0V
m
On state drain current
VGS=4.5V, ID=20A
RDS(ON)
Drain-Source Breakdown Voltage
ID=250A, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=20A
Static Drain-Source On-Resistance
VDS=VGS ID=250A
VDS=0V, VGS= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
IDSS
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
A
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C.
Rev 5: April 2011
www.aosmd.com
Page 2 of 6
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