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參數(shù)資料
| 型號(hào)： | AON6704 |
| 廠商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 85 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 6 X 5 MM, GREEN, DFN-8 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 266K |
| 代理商： | AON6704 |
AON6704
Symbol
Min
Typ
Max
Units
BVDSS
30
V
VDS=30V, VGS=0V
0.5
TJ=125°C
100
IGSS
100
nA
VGS(th)
Gate Threshold Voltage
1.4
1.9
2.4
V
ID(ON)
250
A
2
2.5
TJ=125°C
3.2
3.9
2.7
3.4
m
gFS
120
S
VSD
0.4
0.7
V
IS
85
A
Ciss
3000
3800
4600
pF
Coss
420
600
780
pF
Crss
250
420
590
pF
Rg
0.3
0.6
0.9
Qg(4.5V)
22
32
39
nC
Qgs
10
nC
Qgd
13
nC
tD(on)
10
ns
tr
6
ns
tD(off)
38
ns
tf
8
ns
trr
10
14
17
ns
Qrr
19
24
30
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
IF=20A, dI/dt=500A/s
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
VDS=0V, VGS= ±20V
VGS=10V, VDS=15V, RL=0.75,
RGEN=3
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
Gate resistance
Turn-Off Fall Time
Gate Source Charge
Gate Drain Charge
Total Gate Charge
ID=10mA, VGS=0V
V=10V, VDS=5V
VGS=10V, ID=20A
Reverse Transfer Capacitance
IS=1A,VGS=0V
VDS=5V, ID=20A
VGS=4.5V, ID=20A
Diode Forward Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
mA
VDS=VGS ID=250A
RDS(ON)
Static Drain-Source On-Resistance
m
Gate-Body leakage current
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s
Maximum Body-Diode Continuous Current
G
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C.
Rev 3: March 2011
www.aosmd.com
Page 2 of 7
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