參數(shù)資料
型號(hào)： AP01L60AT
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： 小信號(hào)晶體管
英文描述： 160 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝： ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù)： 3/5頁(yè)
文件大?。?/td> 105K
代理商： AP01L60AT
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
AP01L60AT
0
0.4
0.8
1.2
1.6
2
2.4
2.8
-50
0
50
100
150
T j , Junction Temperature (
o C )
N
o
rmalize
d
R
DS(ON)
I D =0.5A
V GS =10V
0
0.5
1
1.5
012
24
36
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
10V
6.0V
5.5V
5.0V
V GS =4.5V
0
0.25
0.5
0.75
1
0
1020
3040
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
10V
5.0V
4.5V
V GS =4.0V
0.01
0.1
1
10
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j = 150
o C
T j = 25
o C
1
2
3
4
-50
0
50
100
150
T j , Junction Temperature (
o C )
V
GS(t
h)
(V
)
0.8
0.9
1
1.1
1.2
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
BV
DSS
(V
)
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