參數(shù)資料
型號： AP01L60AT
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： 小信號晶體管
英文描述： 160 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝： ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 4/5頁
文件大?。?/td> 105K
代理商： AP01L60AT
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Drain Current v.s.
Fig 10. Typical Power Dissipation
Case Temperature
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
AP01L60AT
0
4
8
12
16
02
46
8
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =0.1A
V DS =480V
1
10
100
1000
1
101928
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
Ciss
Coss
Crss
td(on) tr
td(off)tf
VDS
VGS
10%
90%
Q
VG
10V
QGS
QGD
QG
Charge
0
0.2
0.4
0.6
0.8
1
0
50
100
150
T A , Case Temperature (
o C )
P
D
(W
)
0
0.05
0.1
0.15
0.2
25
50
75
100
125
150
T A , Case Temperature (
o C )
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
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AP01L60AT_10 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness
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