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參數(shù)資料
| 型號： | AP02N90J-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 1.9 A, 900 V, 7.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 62K |
| 代理商： | AP02N90J-HF |
AP02N90H/J-HF
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
900V
▼ Low On-resistance
RDS(ON)
7.2Ω
▼ Fast Switching Characteristics
ID
1.9A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
1
A
PD@TC=25℃
Total Power Dissipation
W
W/℃
PD@TA=25℃
Total Power Dissipation
4
W
EAS
Single Pulse Avalanche Energy
2
mJ
IAR
Avalanche Current
A
TSTG
℃
TJ
Operating Junction Temperature Range
℃
Thermal Data
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
2
℃/W
Rthj-a
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data & specifications subject to change without notice
18
1.9
1.2
+30
Parameter
Rating
900
Halogen-Free Product
1
Storage Temperature Range
-55 to 150
6
62.5
Linear Derating Factor
0.5
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
201008115
2
-55 to 150
Parameter
1.9
G
D S
TO-251(J)
G
D
S
TO-252(H)
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts.
The through-hole version (AP02N90J) is available for low-profile
applications.
G
D
S
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