參數(shù)資料
型號(hào): AP0904GJ-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 51 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 106K
代理商: AP0904GJ-HF
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-resistance
BVDSS
40V
▼ Simple Drive Requirement
RDS(ON)
10m
▼ Fast Switching Characteristic
ID
51A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
2.8
/W
Rthj-a
62.5
/W
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
110
/W
Data & specifications subject to change without notice
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
Thermal Data
Parameter
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
200912012
1
Total Power Dissipation
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
51
Continuous Drain Current, VGS @ 10V
32
Pulsed Drain Current
1
Parameter
Rating
Drain-Source Voltage
40
AP0904GH/J-HF
44.6
Halogen-Free Product
200
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP0904GJ)
are available for low-profile applications.
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-251(J)
G
D
S
TO-252(H)
相關(guān)PDF資料
PDF描述
AP0904GH-HF 51 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP09N20BGH-HF 7.8 A, 200 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP09N70I-A-HF 9 A, 650 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP09N70R-H 8.3 A, 700 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
AP09N70P-H 8.3 A, 700 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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