參數(shù)資料
型號(hào)： AP2306GN-HF
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 5.3 A, 20 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 3/4頁
文件大?。?/td> 100K
代理商： AP2306GN-HF
AP2306GN-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
20
40
60
80
01
23
45
67
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
V G =2.5V
4.0V
5.0V
4.5V
0
10
20
30
40
50
0123
45678
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
4.0V
V G =2.5V
4.5V
5.0V
0.01
0.1
1
10
100
0
0.4
0.8
1.2
1.6
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C )
V
GS(t
h)
(V
)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
V G =4.5V
I D =5.3A
20
40
60
80
100
135
79
11
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =5.3A
T A =25
o C
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