參數(shù)資料
型號： AP2306GN-HF
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 5.3 A, 20 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 4/4頁
文件大小： 100K
代理商： AP2306GN-HF
AP2306GN-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
4
0
2
4
6
8
10
12
14
0
5
10
15
20
25
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS =10V
I D =5.3A
10
100
1000
1
5
9
131721
2529
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
10
100
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
t
T
Rthja = 270℃/W
0.75x RATED
V
TO THE
OSCILLOSCOPE
-
+
10 V
D
G
S
VDS
VGS
RG
RD
0.5 x RATED VDS
TO THE
OSCILLOSCOPE
-
+
D
G
S
VDS
VGS
I
D
I
G
1~ 3 mA
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