參數(shù)資料
型號(hào)： AP2530AGY-HF
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 30 V, 0.072 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： HALOGEN FREE AND ROHS COMPLIANT PACKAGE-6
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 121K
代理商： AP2530AGY-HF
N-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=3A
-
72
mΩ
VGS=4.5V, ID=2A
-
135
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=5V, ID=3A
-
4.6
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
1
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=3A
-
2.8
4.5
nC
Qgs
Gate-Source Charge
VDS=15V
-
1.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
1.4
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
5.5
-
ns
tr
Rise Time
ID=1A
-
6.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3
-10
-
ns
tf
Fall Time
VGS=10V
-
2
-
ns
Ciss
Input Capacitance
VGS=0V
-
200
320
pF
Coss
Output Capacitance
VDS=15V
-
60
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1
-
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=0.9A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=3A, VGS=0V
-
15
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
8
-
nC
2
AP2530AGY-HF
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