參數(shù)資料
型號: AP25N10GH-HF
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 23 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件頁數(shù): 1/4頁
文件大小: 100K
代理商: AP25N10GH-HF
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low Gate Charge
BVDSS
100V
▼ Single Drive Requirement
RDS(ON)
80mΩ
▼ RoHS Compliant & Halogen-Free
ID
23A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.3
/W
Rthj-a
62.5
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.77
Pulsed Drain Current
1
80
Total Power Dissipation
96
Continuous Drain Current, VGS @ 10V
23
Continuous Drain Current, VGS @ 10V
14.6
Drain-Source Voltage
100
Gate-Source Voltage
+20
AP25N10GH/J-HF
Parameter
Rating
200906163
Halogen-Free Product
1
-55 to 150
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
G
D
S
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP25N10GJ)
are available for low-profile applications.
G
D
S
TO-251(J)
G
D
S
TO-252(H)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP25N10GJ-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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AP25P15GI 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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