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參數(shù)資料
| 型號： | AP25N10GS-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 23 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 100K |
| 代理商： | AP25N10GS-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low Gate Charge
BVDSS
100V
▼ Simple Drive Requirement
RDS(ON)
80mΩ
▼ Fast Switching Characteristic
ID
23A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
1
A
PD@TC=25℃
Total Power Dissipation
W
W/℃
TSTG
℃
TJ
Operating Junction Temperature Range
℃
Thermal Data
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
1.3
℃
/W
Rthj-a
40
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃
/W
Data & specifications subject to change without notice
1
200906033
AP25N10GS/P-HF
Halogen-Free Product
0.77
Parameter
Rating
100
+20
Linear Derating Factor
Storage Temperature Range
23
14.6
80
-55 to 150
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
-55 to 150
96
G
D
S
G
D
S
TO-220(P)
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-263(S)
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP25N10GP)
are available for low-profile applications.
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