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參數(shù)資料
| 型號： | AP25N10GS-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 23 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 100K |
| 代理商： | AP25N10GS-HF |
AP25N10GS/P-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
10
20
30
40
50
03
69
12
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
V G = 5 .0V
10V
9.0 V
8.0 V
7.0 V
0
10
20
30
40
03
69
12
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C = 150
o C
V G = 5 .0V
10V
9.0 V
8 .0V
7.0 V
50
70
90
110
130
2468
10
V GS Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =12A
T C =25
o C
0.4
0.8
1.2
1.6
2.0
2.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =16A
V G =10V
0
5
10
15
20
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.4
0.6
0.8
1.0
1.2
1.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
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