- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51258 > AP2608GY (ADVANCED POWER ELECTRONICS CORP) 0.57 A, 150 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | AP2608GY |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 0.57 A, 150 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-6 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 58K |
| 代理商： | AP2608GY |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
150
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=0.5A
-
2.6
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=0.6A
-
0.6
-
S
IDSS
Drain-Source Leakage Current
VDS=150V, VGS=0V
-
25
uA
Drain-Source Leakage Current (Tj=70
oC) V
DS=120V ,VGS=0V
-
100
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=0.5A
-
3
4.8
nC
Qgs
Gate-Source Charge
VDS=120V
-
0.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
0.7
-
nC
td(on)
Turn-on Delay Time
2
VDS=75V
-
7.4
-
ns
tr
Rise Time
ID=0.5A
-
6.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
58
-
ns
tf
Fall Time
RD=150Ω
-26
-
ns
Ciss
Input Capacitance
VGS=0V
-
80
130
pF
Coss
Output Capacitance
VDS=25V
-
17
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
3.7
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=1.3A, VGS=0V
-
1.5
V
trr
Reverse Recovery Time
2
IS=1A, VGS=0V,
-
57
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
120
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2 copper pad of FR4 board t ≦ 10S ; 156℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2608GY
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP2764AI-A-HF | 9 A, 650 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP2764I-A | 9 A, 680 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP2864I-A-HF | 7 A, 650 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP28G40GEO | 400 V, N-CHANNEL IGBT |
| AP2N7002K-HF | 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP2609GY-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small Package Outline |
| AP2609GYT-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Small Size & Lower Profile |
| AP2610GY-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2611GY-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP2611GYT-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Small Size & Lower Profile |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。