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參數(shù)資料
| 型號(hào)： | AP2608GY |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 0.57 A, 150 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT PACKAGE-6 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 58K |
| 代理商： | AP2608GY |
AP2608GY
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
Q
VG
10V
QGS
QGD
QG
Charge
1
10
100
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 156℃/W
t
T
0
2
4
6
8
10
12
01234
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS =120V
I D =0.5A
0.001
0.01
0.1
1
10
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
100us
1ms
10ms
100ms
1s
DC
T A =25
o C
Single Pulse
td(on) tr
td(off) tf
VDS
VGS
10%
90%
0.02
Operation in this
area limited by
RDS(ON)
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