參數(shù)資料
型號： AP4002J
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 2 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝： ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 2/6頁
文件大小： 0K
代理商： AP4002J
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
600
-
V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1.0A
-
5
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=2.0A
-
1.5
-
S
IDSS
Drain-Source Leakage Current
VDS=600V, VGS=0V
-
100
uA
IGSS
Gate-Source Leakage
VGS=±30V
-
±1
uA
Qg
Total Gate Charge
3
ID=2A
-
12
19
nC
Qgs
Gate-Source Charge
VDS=480V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
5.5
-
nC
td(on)
Turn-on Delay Time
3
VDD=200V
-
10
-
ns
tr
Rise Time
ID=1A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=50Ω,VGS=10V
-
52
-
ns
tf
Fall Time
RD=200Ω
-19
-
ns
Ciss
Input Capacitance
VGS=0V
-
375
600
pF
Coss
Output Capacitance
VDS=10V
-
170
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
45
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
3
Tj=25℃, IS=2A, VGS=0V
-
1.5
V
trr
Reverse Recovery Time
3
IS=2A, VGS=0V,
-
340
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
2.2
-
uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting Tj=25
oC , V
DD=50V , L=10mH , RG=25Ω
3.Pulse test
AP4002H/J
THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT
OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
2/4
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