參數(shù)資料
型號： AP4232AGM
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 7.8 A, 30 V, 0.023 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： ROHS COMPLIANT, SOP-8
文件頁數(shù)： 1/5頁
文件大?。?/td> 178K
代理商： AP4232AGM
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-Resistance
BVDSS
30V
▼ Simple Drive Requirement
RDS(ON)
23mΩ
▼ Dual N MOSFET Package
ID
7.8A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
62.5
℃/W
Data and specifications subject to change without notice
RoHS-compliant Product
Thermal Data
Parameter
Total Power Dissipation
2
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
Storage Temperature Range
Continuous Drain Current
3
6.2
Pulsed Drain Current
1
30
0.016
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
201128071
1
AP4232AGM
Rating
30
±20
7.8
S1
G1
S2
G2
D1
D2
SO-8
G2
D2
S2
G1
D1
S1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
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