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參數(shù)資料
| 型號： | AP4425GO |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 4200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, TSSOP-8 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 118K |
| 代理商： | AP4425GO |
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Small & Thin Package
BVDSS
-20V
▼ Fast Switching Characteristic
RDS(ON)
42mΩ
▼ Capable of 1.8V Gate Drive
ID
-4.2A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
120
℃/W
Rthj-L
Thermal Resistance Junction-lead
Max.
70
℃/W
Data and specifications subject to change without notice
Storage Temperature Range
-55 to 150
Total Power Dissipation
1
Linear Derating Factor
Continuous Drain Current
3
-3.3
Pulsed Drain Current
1
-30
Gate-Source Voltage
±8
Continuous Drain Current
3
-4.2
Parameter
Rating
Drain-Source Voltage
- 20
200312072-1/4
AP4425GO
-55 to 150
RoHS-compliant Product
0.01
Operating Junction Temperature Range
Thermal Data
Parameter
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
D
S
D
S
D
S
G
TSSOP-8
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