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參數(shù)資料
| 型號： | AP4410GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 202K |
| 代理商： | AP4410GM |
AP4410GM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =10A
V G =10V
0
50
100
150
200
01
2345
678
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
10V
8.0V
6.0V
V G =4.0V
0
50
100
150
024
68
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
V G =4.0V
6.0V
8.0V
10V
10
12
14
16
18
20
34
56
789
10
11
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =10A
T A =25
o C
0.01
0.10
1.00
10.00
100.00
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0
1
2
3
-50
0
50
100
150
T j , Jujnction Temperature (
o C )
V
GS(t
h)
(V
)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP4410M | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP4411GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance |
| AP4412GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4412M | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE |
| AP4413GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance |
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