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參數(shù)資料
| 型號(hào)： | AP4532GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 30 V, 0.05 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SOP-8 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大小： | 112K |
| 代理商： | AP4532GM |
N-Channel
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
AP4532GM
10
100
1000
1
5
9
13
17
21
25
29
V DS (V)
C
(
p
F)
f=1.0MHz
Ciss
Coss
Crss
0
2
4
6
8
10
12
02468
10
12
Q G , Total Gate Charge (nC)
V
GS
,
Gate
to
S
o
u
rc
eV
o
ltage
(
V
)
I D=5A
V DS=10V
0.01
0.1
1
10
100
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V SD (V)
I
S
(A
)
T j=25
o C
T j=150
o C
0
0.5
1
1.5
2
2.5
3
-50
0
50
100
150
T j ,Junction Temperature (
o C)
V
GS
(t
h
)(V
)
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