參數(shù)資料
型號(hào)： AP4575GH-HF
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類(lèi)： JFETs
英文描述： 60 V, 0.036 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： HALOGEN FREE AND ROHS COMPLIANT, TO-252, 5 PIN
文件頁(yè)數(shù)： 3/7頁(yè)
文件大?。?/td> 120K
代理商： AP4575GH-HF
AP4575GH-HF
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-60
-
V
VGS=-10V, ID=-4A
-
75
m
VGS=-4.5V, ID=-3A
-
90
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-3A
-
11
-
S
IDSS
Drain-Source Leakage Current
VDS=-48V, VGS=0V
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
2
ID=-3A
-
14
22.4
nC
Qgs
Gate-Source Charge
VDS=-48V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
8
-
nC
td(on)
Turn-on Delay Time
2
VDS=-30V
-
9
-
ns
tr
Rise Time
ID=-3A
-
9.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-42
-
ns
tf
Fall Time
VGS=-10V
-
28
-
ns
Ciss
Input Capacitance
VGS=0V
-
1000 1600
pF
Coss
Output Capacitance
VDS=-25V
-
125
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
95
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.6
3.2
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=-2.4A, VGS=0V
-
-1.3
V
trr
Reverse Recovery Time
2
IS=-3A, VGS=0V
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/s
-
45
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
P-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
RDS(ON)
Static Drain-Source On-Resistance
2
相關(guān)PDF資料
PDF描述
AP4800BGM 30 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
AP4813GSM-HF 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET
AP4820GYT-HF 15 A, 30 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET
AP4835GMT-HF 30 V, 0.021 ohm, P-CHANNEL, Si, POWER, MOSFET
AP4880GEM 25 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP4575GM 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4575GM_12 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance
AP4575GM-HF 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance
AP4575M 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP4-5778-1 制造商:Sensata Technologies 功能描述:AP4-5778-1 /Pole # 1 /Prod Family: 0202
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*