參數資料
型號: AP4880GEM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 25 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁數: 1/4頁
文件大?。?/td> 126K
代理商: AP4880GEM
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
25V
▼ Fast Switching Characteristic
RDS(ON)
8.5mΩ
▼ Low On-resistance
ID
14A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
50
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
2.5
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.02
Continuous Drain Current
3
11
Pulsed Drain Current
1
50
Gate-Source Voltage
±16
Continuous Drain Current
3
14
Parameter
Rating
Drain-Source Voltage
25
200711061-1/4
AP4880GEM
Pb Free Plating Product
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,ruggedized
device design, ultra low on-resistance and cost-effectiveness.
S
G
D
SO-8
S
G
D
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
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