- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄36694 > AP4880GEM (ADVANCED POWER ELECTRONICS CORP) 25 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | AP4880GEM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 25 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SOP-8 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 126K |
| 代理商： | AP4880GEM |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
25
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=14A
-
8.5
mΩ
VGS=4.5V, ID=10A
-
15
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=14A
-
13.5
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=25V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=20V ,VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=±16V
-
±30
uA
Qg
Total Gate Charge
2
ID=14A
-
23
37
nC
Qgs
Gate-Source Charge
VDS=20V
-
3.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
17
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
11
-
ns
tr
Rise Time
ID=1A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
36
-
ns
tf
Fall Time
RD=15Ω
-25
-
ns
Ciss
Input Capacitance
VGS=0V
-
900
1440
pF
Coss
Output Capacitance
VDS=25V
-
490
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
195
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
3
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=2A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=14A, VGS=0V,
-
45
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
42
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
2/4
AP4880GEM
3.Surface mounted on 1 in
2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP4936GM | 5.8 A, 25 V, 0.037 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| AP4951GM | 3.4 A, 60 V, 0.096 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| AP4957AGM | 7.4 A, 30 V, 0.026 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| AP4963GEM-HF | 6 A, 30 V, 0.036 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET |
| AP4 | S BAND, Si, N-CHANNEL, RF POWER, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP4880GM | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4880M | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4920GM | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP4920GM-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance |
| AP4920M | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。