參數(shù)資料
型號(hào): AP4957AGM
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 7.4 A, 30 V, 0.026 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, SOP-8
文件頁(yè)數(shù): 4/5頁(yè)
文件大?。?/td> 178K
代理商: AP4957AGM
APT33N90JCCU3
APT
33N90JCCU3
Rev
0
Septem
ber
,2009
www.microsemi.com
4 – 5
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Therm
al
I
m
peda
nce
C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
6V
0
40
80
120
0
5
10
15
20
VDS, Drain to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
e
n
t(A
)
Low Voltage Output Characteristics
VGS=20, 8V
0
5
10
15
20
25
30
35
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
Dr
a
in
Cu
rr
e
n
t(A
)
DC Drain Current vs Case Temperature
900
925
950
975
1000
25
50
75
100
125
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BV
DS
S
,D
rai
n
t
o
Source
Break
down
Volt
a
g
e
Maximum Safe Operating Area
10 ms
100 s
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,Dr
ai
n
Cu
rr
e
n
t(A)
limited by RDSon
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
1
10
100
1000
10000
100000
0
25 50 75 100 125 150 175 200
VDS, Drain to Source Voltage (V)
C
,C
a
pac
it
a
nce
(
pF)
Capacitance vs Drain to Source Voltage
0
2
4
6
8
10
0
50
100
150
200
250
300
Gate Charge (nC)
V
GS
,G
a
te
to
S
o
u
rce
V
o
lt
ag
e
(V
)
Gate Charge vs Gate to Source Voltage
VDS=400V
ID=26A
TJ=25°C
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