參數(shù)資料
型號: AP50T03GH
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 37 A, 30 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: LEAD FREE PACKAGE-3
文件頁數(shù): 1/4頁
文件大?。?/td> 77K
代理商: AP50T03GH
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
30V
▼ Low On-resistance
RDS(ON)
16mΩ
▼ Fast Switching Characteristic
ID
37A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
TJ
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
3.6
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data & specifications subject to change without notice
AP50T03GH/J
Parameter
Rating
Pb Free Plating Product
Drain-Source Voltage
30
Gate-Source Voltage
±20
Continuous Drain Current
37
Continuous Drain Current
24
Pulsed Drain Current
1
110
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.28
Storage Temperature Range
Total Power Dissipation
34.7
-55 to 150
200315051
Thermal Data
Parameter
G
D
S
TO-251(J)
G D
S
TO-252(H)
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP50T03GJ) are available for low-profile applications.
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參數(shù)描述
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