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參數(shù)資料
| 型號： | AP50T03GH |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 37 A, 30 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 77K |
| 代理商： | AP50T03GH |
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=25A
-
16
mΩ
VGS=4.5V, ID=18A
-
30
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=25A
-
8
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=30V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=150
oC)
VDS=24V, VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
±100
nA
Qg
Total Gate Charge
2
ID=25A
-
10
16
nC
Qgs
Gate-Source Charge
VDS=24V
-
3.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6
-
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
9
-
ns
tr
Rise Time
ID=25A
-
75
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
17
-
ns
tf
Fall Time
RD=0.6Ω
-4
-
ns
Ciss
Input Capacitance
VGS=0V
-
815
1304
pF
Coss
Output Capacitance
VDS=25V
-
180
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.3
2
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=25A, VGS=0V
-
1.3
V
t
rr
Reverse Recovery Time
2
IS=25A, VGS=0V,
-
24
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
10
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP50T03GH/J
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PDF描述 |
|---|---|
| AP50T03GJ | 37 A, 30 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP50T10GH-HF | 38 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP50T10GJ-HF | 38 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP50T10GS-HF | 37 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AP5321GM-HF | 100 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP50T03GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement Low On-resistance |
| AP50T10AGI-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP50T10GI-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP50T10GM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP50T10GP-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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