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參數(shù)資料
| 型號(hào)： | AP60T10GS |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 67 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | ROHS COMPLIANT, TO-263, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 95K |
| 代理商： | AP60T10GS |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
100V
▼ Lower On-resistance
RDS(ON)
18m
▼ Fast Switching Characteristic
ID
67A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
EAS
Single Pulse Avalanche Energy
3
mJ
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.75
℃
/W
Rthj-a
40
℃
/W
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
62
℃
/W
Data and specifications subject to change without notice
200911104
1
RoHS-compliant Product
-55 to 150
288
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Drain-Source Voltage
100
AP60T10GS/P
Parameter
Rating
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
67
Continuous Drain Current, VGS @ 10V
42
Pulsed Drain Current
1
250
Total Power Dissipation
167
Parameter
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
Thermal Data
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-220(P)
G
D
S
TO-263(S)
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP60T10GP)
are available for low-profile applications.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| AP60U02GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low On-resistance |
| AP60U03GH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low On-resistance, Simple Drive Requirement |
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