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參數(shù)資料
| 型號： | AP6800GEO |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 6000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, TSSOP-8 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 107K |
| 代理商： | AP6800GEO |
AP6800GEO
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
200109061-1/4
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
10
40
70
02468
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
ΩΩΩΩ
)
I D = 4A
T A =25
o C
0
10
20
30
40
01
23
4
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
4.5V
3.5V
3.0V
2.5V
V G =2.0V
0
10
20
30
40
01
23
4
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
4.5V
3.5V
3.0V
2.5V
V G =2.0V
0.3
0.7
1.1
1.5
1.9
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D = 6A
V G = 4.5V
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =150
o CT
j =25
o C
0
0.4
0.8
1.2
1.6
-50
0
50
100
150
T j , Junction Temperature (
o C)
V
GS(t
h)
(V
)
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