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參數(shù)資料
| 型號(hào)： | AP6800GEO |
| 廠(chǎng)商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 6000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, TSSOP-8 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大小： | 107K |
| 代理商： | AP6800GEO |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
AP6800GEO
0.01
0.1
1
10
100
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
ja
)
PDM
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=208
oC/W
t
T
0.02
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0.01
0
2
4
6
8
10
12
0
5
10
15
20
25
30
35
40
45
50
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
I D =6 A
V DS =10V
V DS =12V
V DS =15V
100
1000
10000
1
5
9
131721
2529
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
Q
VG
5V
QGS
QGD
QG
Charge
0
10
20
30
40
50
60
70
02
46
V GS , Gate-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T j =150
o C
T j =25
o C
V DS = 5V
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