參數(shù)資料
型號(hào)： AP6921GMT-HF
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 34 A, 30 V, 0.0115 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8
文件頁(yè)數(shù)： 3/7頁(yè)
文件大?。?/td> 128K
代理商： AP6921GMT-HF
AP6921GMT-HF
CH-2 Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=18A
-
5
mΩ
VGS=4.5V, ID=10A
-
8
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=18A
-
50
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
+100
nA
Qg
Total Gate Charge
ID=18A
-
14
22
nC
Qgs
Gate-Source Charge
VDS=15V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
8
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
9
-
ns
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3
-25
-
ns
tf
Fall Time
VGS=10V
-
14
-
ns
Ciss
Input Capacitance
VGS=0V
-
1170 1870
pF
Coss
Output Capacitance
VDS=15V
-
345
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
220
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
3
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=18A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
IS=18A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
20
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2 copper pad of FR4 board, t <10sec.
4.Surface mounted on min. copper pad of FR4 board, on steady-state
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
相關(guān)PDF資料
PDF描述
AP70L02GH 66 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP70L02GJ 66 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP70T03GS 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AP70T03GP 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP70U02GH 60 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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