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參數(shù)資料
| 型號： | AP70L02GH |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 66 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | LEAD FREE PACKAGE-3 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 81K |
| 代理商： | AP70L02GH |
AP70L02GH/J
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
0
10
20
30
40
50
60
70
80
25
50
75
100
125
150
T c , Case Temperature (
o C)
I
D
,
Dra
in
C
u
rre
nt
(A
)
0
10
20
30
40
50
60
70
80
0
50
100
150
T c ,Case Temperature (
o C)
P
D
(W
)
1
10
100
1000
1
10
100
V DS (V)
I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
10us
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
No
rma
li
zed
Therma
lR
esp
o
n
se
(R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
SINGLE PULSE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP70L02GJ | 66 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP70T03GS | 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AP70T03GP | 60 A, 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP70U02GH | 60 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP73T03GMT-HF | 30 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP70L02GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Low Gate Charge, Simple Drive Requirement |
| AP70L02GP | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP70L02GS | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP70T03AH | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low Gate Charge |
| AP70T03AJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Simple Drive Requirement, Low Gate Charge |
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