參數(shù)資料
型號(hào)： AP78T10GP-HF
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 68 A, 100 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN
文件頁數(shù)： 3/4頁
文件大?。?/td> 93K
代理商： AP78T10GP-HF
AP78T10GP-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
40
80
120
160
200
240
0
8
16
24
32
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
8.0V
7.0V
6.0V
V G = 5.0V
0
20
40
60
80
100
120
0
4
8
12
16
20
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
10V
8.0V
7.0V
6.0V
V G = 5.0V
T C = 150
o C
0.4
0.8
1.2
1.6
2.0
2.4
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =30A
V G =10V
0
10
20
30
40
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
T j ,Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
0.8
0.9
1
1.1
1.2
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
BV
DSS
(V
)
相關(guān)PDF資料
PDF描述
AP80N30W 36 A, 300 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET
AP80T10GP-HF 80 A, 100 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP80T10GR-HF 80 A, 100 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
AP83T02GH-HF 75 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP83T02GJ-HF 75 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
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