參數(shù)資料
型號(hào): AP80N30W
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: 36 A, 300 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ROHS COMPLIANT, TO-3P, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 95K
代理商: AP80N30W
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
300V
▼ Lower On-resistance
RDS(ON)
66m
▼ High Speed Switching
ID
36A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
IDM
A
IDR
A
IDR(PULSE)
A
PD@TC=25℃
W
IAR
Avalanche Current
3
A
EAR
Single Pulse Avalanche Energy
3
mJ
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.6
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
40
/W
Data and specifications subject to change without notice
1
Parameter
Drain-Source Voltage
Pulsed Drain Current
1
Body-Drain Diode Reverse Drain Current
Body-Drain Diode Reverse Drain Peak Current
1
36
144
Gate-Source Voltage
+30
AP80N30W
Rating
300
144
201009153
RoHS-compliant Product
Continuous Drain Current, VGS @ 10V
36
Total Power Dissipation
208
-55 to 150
Operating Junction Temperature
150
30
45
Thermal Data
Parameter
Storage Temperature Range
G
D
S
G
D
S
TO-3P
AP80N30 from APEC provide the designer with the best combination of
fast switching, low on-resistance and cost-effectiveness.
The TO-3P package is preferred for commercial & industrial applications
with higher power level preclusion than TO-220 device.
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