參數(shù)資料
型號(hào)： AP85T03GH
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 2/6頁
文件大?。?/td> 173K
代理商： AP85T03GH
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=10V, ID=45A
-
6
m
VGS=4.5V, ID=30A
-
10
m
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
55
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=175
oC) VDS=24V, VGS=0V
-
500
uA
IGSS
Gate-Source Leakage
VGS=+20V
-
+100
nA
Qg
Total Gate Charge
2
ID=30A
-
33
52
nC
Qgs
Gate-Source Charge
VDS=24V
-
8
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
24
nC
Qoss
Output Charge
VDD=15V,VGS=0V
-
24.5
39
nC
td(on)
Turn-on Delay Time
2
VDS=15V
-
11
-
ns
tr
Rise Time
ID=30A
-
77
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
35
-
ns
tf
Fall Time
RD=0.5Ω
-67
-
ns
Ciss
Input Capacitance
VGS=0V
-
2700 4200
pF
Coss
Output Capacitance
VDS=25V
-
550
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
380
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
2
IS=45A, VGS=0V
-
1.3
V
trr
Reverse Recovery Time
2
IS=30A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
10
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP85T03GH/J
相關(guān)PDF資料
PDF描述
AP85T03GS 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AP85T03GP 75 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP85T08GS 75 A, 80 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AP85T08GP 75 A, 80 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP86T02GJ 75 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP85T03GJ 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP85T08GP-HF-3TB 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 80V 13MOHM TO-220 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 80V, 13MOHM, TO-220 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 80V, 13MOHM, TO-220, Transistor Polarity:N Channel, Continuous Drai
AP85T08GS-HF-3TR 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET NCH 80V 13MOHM TO-263 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 80V, 13MOHM, TO-263 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, NCH, 80V, 13MOHM, TO-263, Transistor Polarity:N Channel, Continuous Drain Current Id:75A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.013ohm, Rds(on) Test Voltage Vgs:10V, Power Dissipation Pd:138W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, NCH, 80V, 13MOHM, TO-263, Transistor Polarity:N Channel, Continuous Drai
AP85T10AGI-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP85T10AGP-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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