參數(shù)資料
型號： AP85T08GS
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 75 A, 80 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： ROHS COMPLIANT, TO-263, 3 PIN
文件頁數(shù)： 4/6頁
文件大?。?/td> 239K
代理商： AP85T08GS
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
AP85T08GS/P
Q
VG
4.5V
QGS
QGD
QG
Charge
100
1000
10000
1
5
9
1317
2125
29
V DS ,Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
1
10
100
1000
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
0
40
80
120
02
46
8
V GS , Gate-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T j =150
o C
T j =25
o C
V DS =5V
0
2
4
6
8
10
12
0
2040
6080
100
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS = 40V
V DS =50 V
V DS =64 V
I D =45 A
相關(guān)PDF資料
PDF描述
AP85T08GP 75 A, 80 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP86T02GJ 75 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP86T02GH 75 A, 25 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
AP86T03GJ 75 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP86T03GH 75 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
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