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參數(shù)資料
| 型號： | AP9408GH |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 57 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 99K |
| 代理商： | AP9408GH |
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
AP9408GH/J
0
20
40
60
80
100
0.0
2.0
4.0
6.0
8.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =175
o C
10V
7 .0V
5.0V
4.5 V
V G =3.0V
0
20
40
60
80
100
120
0.0
1.0
2.0
3.0
4.0
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
7.0 V
5.0V
4.5 V
V G = 3.0 V
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
200
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =30A
V G =10V
0
10
20
30
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =175
o C
6
8
10
12
14
24
68
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =20A
T C =25
o C
0.0
0.4
0.8
1.2
1.6
-50
0
50
100
150
200
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AP9408GM-HF | 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| AP9410GM | 18 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9408GJ | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Simple Drive Requirement |
| AP9408GM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Lower Gate Charge, Fast Switching Characteristic |
| AP-940-G-A | 制造商:Samtec Inc 功能描述:CONN DIP ADPTR PL 40 POS 2.54MM ST TH - Bulk |
| AP-940-G-A1 | 制造商:Samtec Inc 功能描述:CONN DIP ADPTR PL 40 POS 2.54MM ST TH - Bulk |
| AP-940-G-B | 制造商:Samtec Inc 功能描述:CONN DIP ADPTR PL 40 POS 2.54MM ST TH - Bulk |
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