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參數(shù)資料
| 型號： | AP9452GG-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 20 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 90K |
| 代理商： | AP9452GG-HF |
AP9452GG-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
10
20
30
40
50
01
234
56
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =25
o C
4.5V
3.5V
2.5V
V GS =1.5V
0
10
20
30
40
0123
4567
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
4.5V
3.5V
2.5V
V GS =1.5V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
V GS =4.5V
I D =4A
0.01
0.1
1
10
100
0
0.4
0.8
1.2
1.6
V SD , Source -to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.2
0.45
0.7
0.95
1.2
-50
0
50
100
150
T j , Junction Temperature (
o C )
V
GS(t
h)
(V
)
25
35
45
55
65
135
79
11
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =4 A
T A =25
o C
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