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參數(shù)資料
| 型號： | AP9452GG-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 20 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-4 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 90K |
| 代理商： | AP9452GG-HF |
AP9452GG-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
td(on) tr
td(off)t
f
VDS
VGS
10%
90%
Q
VG
4.5V
QGS
QGD
QG
Charge
0
2
4
6
8
10
12
14
0
2
4
6
8
1012
1416
Q G , Total Gate Charge (nC)
V
GS
,
Gate
to
S
o
u
rc
eV
oltage
(
V
)
I D =4 A
V DS =16V
V DS =12V
V DS =10V
0.01
0.1
1
10
100
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A)
T A =25
o C
Single Pulse
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Norm
alize
d
Th
erm
al
R
espon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Rthja=100℃/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
10
100
1000
1
5
9
131721
2529
V DS , Drain-to-Source Voltage (V)
C
(p
F)
f=1.0MHz
Ciss
Coss
Crss
4
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