參數(shù)資料
型號： AP9871GH-HF
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 9.3 A, 60 V, 0.072 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 1/4頁
文件大小： 93K
代理商： AP9871GH-HF
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
60V
▼ Lower Gate Charge
RDS(ON)
72mΩ
▼ Fast Switching Characteristic
ID
9.3A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
10
℃
/W
Rthj-a
62.5
℃
/W
Data and specifications subject to change without notice
Total Power Dissipation
2
200909291
1
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
AP9871GH-HF
Halogen-Free Product
-55 to 150
Parameter
Rating
Drain-Source Voltage
60
Gate-Source Voltage
+20
Continuous Drain Current, VGS @ 10V
9.3
Continuous Drain Current, VGS @ 10V
6
Pulsed Drain Current
1
40
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
12.5
-55 to 150
Operating Junction Temperature Range
G
D
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
TO-252(H)
相關PDF資料
PDF描述
AP98T03GP 80 A, 30 V, 0.0028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
AP98T03GS 80 A, 30 V, 0.0028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AP98T06GS-HF 80 A, 60 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AP9916GJ 35 A, 18 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
AP9916GH 35 A, 18 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
相關代理商/技術參數(shù)
參數(shù)描述
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