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參數(shù)資料
| 型號： | AP9924GO |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 6.8 A, 20 V, 0.02 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, TSSOP-8 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 92K |
| 代理商： | AP9924GO |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low on-resistance
BVDSS
20V
▼ Capable of 2.5V gate drive
RDS(ON)
20mΩ
▼ RoHS Compliant
ID
6.8A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
90
℃
/W
Data and specifications subject to change without notice
AP9924GO
RoHS-compliant Product
Parameter
Rating
Drain-Source Voltage
20
Gate-Source Voltage
+8
Continuous Drain Current
3
6.8
Total Power Dissipation
1.38
Continuous Drain Current
3
5.4
Pulsed Drain Current
1
20
Storage Temperature Range
-55 to 150
Operating Junction Temperature Range
-55 to 150
Thermal Data
Parameter
1
2009002021
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G2
D
S2
G1
D
S1
D
S2
G2
D
S1
G1
TSSOP-8
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