參數(shù)資料
型號(hào)： AP9928GEM
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類(lèi)： JFETs
英文描述： 7.3 A, 20 V, 0.023 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： LEAD FREE, SOP-8
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 72K
代理商： AP9928GEM
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼
▼ Low on-resistance
BVDSS
20V
▼
▼ Capable of 2.5V gate drive
RDS(ON)
23mΩ
▼
▼ Surface mount package
ID
7.3A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
62.5
℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
200121051
Storage Temperature Range
-55 to 150
Operating Junction Temperature Range
-55 to 150
Total Power Dissipation
2
Linear Derating Factor
0.016
Continuous Drain Current
3
5.8
Pulsed Drain Current
1
30
Gate-Source Voltage
±12
Continuous Drain Current
3
7.3
Parameter
Rating
Drain-Source Voltage
20
AP9928GEM
Pb Free Plating Product
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
S1
G1
S2
G2
D1
D2
SO-8
S1
G1
D1
S2
G2
D2
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP9928GEO 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9928GEO-HF-3TR 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET DUALN 20V 23MOHM TSSOP-8 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, DUALN, 20V, 23MOHM, TSSOP-8 制造商:ADVANCED POWER ELECTRONICS CORP 功能描述:MOSFET, DUALN, 20V, 23MOHM, TSSOP-8, Transistor Polarity:N Channel, Continuous Drain Current Id:5A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.023ohm, Rds(on) Test Voltage Vgs:4.5V, Power Dissipation Pd:1W, Operating , RoHS Compliant: Yes 制造商:APEC (ADVANCED POWER ELECTRONICS CORP) 功能描述:MOSFET, DUALN, 20V, 23MOHM, TSSOP-8, Transistor Polarity:N Channel, Continuous D
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