參數(shù)資料
型號： AP9928GEM
廠商： ADVANCED POWER ELECTRONICS CORP
元件分類： JFETs
英文描述： 7.3 A, 20 V, 0.023 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： LEAD FREE, SOP-8
文件頁數(shù)： 2/4頁
文件大?。?/td> 72K
代理商： AP9928GEM
Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
20
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=4.5V, ID=7A
-
23
mΩ
VGS=2.5V, ID=5A
-
32
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.5
-
V
gfs
Forward Transconductance
VDS=5V, ID=7A
-
18
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=20V, VGS=0V
-
1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=16V ,VGS=0V
-
25
uA
IGSS
Gate-Source Leakage
VGS=±12V
-
±10
uA
Qg
Total Gate Charge
2
ID=7A
-
17
27
nC
Qgs
Gate-Source Charge
VDS=16V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9
-
nC
td(on)
Turn-on Delay Time
2
VDS=10V
-
12
-
ns
tr
Rise Time
ID=1A
-
17
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
32
-
ns
tf
Fall Time
RD=10Ω
-17
-
ns
Ciss
Input Capacitance
VGS=0V
-
500
800
pF
Coss
Output Capacitance
VDS=20V
-
260
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
140
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.8
4.2
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VSD
Forward On Voltage
2
IS=1.7A, VGS=0V
-
1.2
V
trr
Reverse Recovery Time
2
IS=7A, VGS=0V,
-
34
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/s
-
28
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135 ℃/W when mounted on Min. copper pad.
AP9928GEM
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