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參數(shù)資料
| 型號(hào)： | AP9970GW-HF |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 120 A, 60 V, 0.0032 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, TO-3P, 3 PIN |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大小： | 93K |
| 代理商： | AP9970GW-HF |
AP9970GW-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
80
160
240
320
0
4
8
12
16
20
24
28
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
10V
8.0V
7.0V
6.0V
V GS =5.0V
0
40
80
120
160
200
04
8
12
16
20
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C = 175
o C
10V
8.0V
7.0V
6.0V
V GS =5.0V
0.2
0.6
1.0
1.4
1.8
2.2
2.6
-50
0
50
100
150
200
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =60A
V G =10V
0
10
20
30
40
50
60
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =175
o C
0.0
0.4
0.8
1.2
1.6
-50
0
50
100
150
200
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
2
2.8
3.6
4.4
5.2
45
67
89
10
V GS ,Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =60A
T C =25
o C
I D =1mA
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